Project Chandler Hutton
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Electrical Characterization. |
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Chandler Hutton.
Texas State University at San Marcos, Department of Physics, RFM 2225, 601 University Drive, San Marcos, TX78666.
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The growth and properties of RF-sputtered NixFe1-xNiO samples are being investigated for possible application in Resistive RAM devices (RRAM).
RRAM is non-volatile memory technology that is currently being considered to replace Flash memory beyond the 14 nm technology node. The material that is being studied are
RF sputtered NiO thin films made by reactive sputtering. The samples were characterized through four different methods; 2-point probe (2pp), linear 4-point probe (4pp),
the Van der Pauw method (VDP) techniques, and by direct measurement on manufactured devices. We acquired measurements using a Keithley 2182A nanovoltmeter, a Keithley 6514
system electrometer, a Keithley 6221 DC and AC current source, and a Keithley 7001 switching system furnished with a Hall card all controlled by a labview program.
Some samples were measured at both RT and 77K by using a cryostat. The resistivity parallel to the surface has semiconductor-like properties. Measurements were done as a
function of the oxygen pressure during deposition. For 60 nm thickness, it was unveiled that the resistivity varied with the oxygen concentration in the sputter gas
showing a maximum for 5% Oxygen and a resistivity of Ravg≅7.89E9 ohms. Presentations/Posters: [1] Chandler Hutton, Ahad Talukder, Nick Talber, Wilhelmus Geerts, "Electrical Characterization of NiO thin films
", Texas Section APS Spring-2017 Meeting, Stephenville, Tarleton State University.
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