Project Page Nick Talbert
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Electrical Characterization of NiO and NiFeO thin films and resistive random access memory devices grown by RF sputtering. |
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Nick Talbert.
Texas State University at San Marcos, Department of Physics, RFM 2225, 601 University Drive, San Marcos, TX78666.
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The electrical properties of Radio Frequency Sputtered NiFeO and NiO films deposited on n and p-type Silicon was investigated for two different oxygen flows. Rectifying properties for Ni0.8Fe0.2Oα on n-Si showed Iforward/Ireverse >10,000 for α>1 and Iforward/Ireverse >50 for α<1. Both types of devices have opposite forward biases. Resistive switching was found for low oxygen samples but not for high oxygen flow samples. Results suggest that NiFeO sputtered at high oxygen flow is p-type. For NiO and NiFeO on p-Si no strong rectifying properties were observed. The specific contact resistivity of Pt/Ni0.9Fe0.1Oα (α>1) was estimated from the difference between the 2pp and 4pp resistance (0.0007 ± 0.0003 Ω cm2). The mobility for high oxygen flow samples was calculated using the perpendicular resistivity as 1.6 × 10-3 cm2/Vs. This mobility does not tell which charge carrier is dominating. Through CV analysis the acceptor mobility was calculated to be approximately 8 × 10-3 cm2/Vs. The acceptor concentration for NiFeO was approximated to be 8 × 1016 cm-3 through CV analysis. IV analysis gave a concentration of 5.73 × 1017 cm-3 within the oxide. Publications: [1] Binod D.C., Andres Oliva, Anival Ayala, Shankar Acharya, Fidele Twagirayezu, James Nick Talbert, Luisa M. Scolfaro, Wilhelmus J. Geerts, “Magnetic Properties of reactive co-sputtered NiFe-oxide samples”, August 13, 2018, 6 page paper published in IEEE Trans. on Magn., DOI: 10.1109/TMAG.2018.2866788[2] James N. Talbert, Samuel R. Cantrell, Md. Abdul Ahad Talukder, Luisa M. Scolfaro, Wilhelmus J. Geerts, "Electrical Characcterization of Silicon - Nickel Iron Oxide Heterojunctions", MRS Advances 4 (2019) 2241-2248. [3] James N. Talbert, Electrical Characterization of Nickel Oxide and Nickel Iron Oxide Thin Films and Resistive Random Access Memory Devices Grown By Radio Frequency Sputtering, thesis Texas State University, San Marcos, May 2019 (thesis). Presentations/Posters: [3] James Nicholas Talbert, Darrell Adams, Jose Mayorga, Wilhelmus J. Geerts, “Measurement Setup for Resistivity RAM Devices”, poster at the Fall-2016 meeting of the TSAPS and the 4 corners section of the APS, Las Cruces, New Mexico.[4] Chandler Hutton, Ahad Talukder, Nick Talbert, Wilhelmus Geerts, “Electrical Characterization of NiO and Fe doped NiO: Resistivity measurements”, poster presentation at the Fall-2017 meeting of the TSAPS, Dallas, October 20-21 2017. [5] Brian Collier, Wilhelmus Geerts, Ahad Talukder, James Nick Talbert, Aaron Medina, Andres Oliva, “Magneto-Optical Faraday Effect in NiO and NiFeO Thin Films”, presentation at the Fall-2017 meeting of the TSAPS, Dallas, October 20-21 2017. [6] Shankar Acharya, Brian Collier, Md. Abdul Ahad Talukder, Wilhelmus Geerts, “Dual Beam Modulated Magneto-Optical Measurement Setup”, poster presentation International Conference on Magnetism 2018, July 19, 2018, San Francisco. [7] Clint Boldt, Md. Abdul Ahad Talukder, James Nick Talbert, Luisa Scolfaro, Wilhelmus J. Geerts, ”Properties of carrier traps in diode and RRAM devices via DLTS”, Fall-2018 TSAPS presentation, October 15, Houston. [8] James Nick Talbert, Wilhelmus J. Geerts, Luisa Scolfaro, “Electrical Characterization of Nickel oxide and Nickel Iron Oxide thin Films and Resistive Random Access Memory Devices grown by Radio Frequency Sputtering”, Fall-2018 TSAPS presentation, October 15, Houston. [9] James Nick Talbert, Wilhelmus J. Geerts, "Electrical Characterization of Silicon Nickel Iron Oxide heterojunctions”, poster presentation at MRS Spring meeting Spring 2019, April 22-26, Phoenix. Nick graduated in December 2019 and is employed with SRC. |
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